Semikron SK45GD063, SEMITOP3 , N-Channel Hex IGBT Transistor Module, 45 A max, 600 V, Through Hole

Номер на артикул на RS: 125-1109Марка: Semikron№ по каталога на производителя: SK45GD063
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Технически документи

Спецификации

Brand

Semikron

Maximum Continuous Collector Current

45 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

6

Package Type

SEMITOP3

Configuration

Hex

Mounting Type

Through Hole

Channel Type

N

Pin Count

36

Transistor Configuration

Six Pack

Dimensions

55 x 31 x 12mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Страна на произход

Italy

Детайли за продукта

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

Semikron SK45GD063, SEMITOP3 , N-Channel Hex IGBT Transistor Module, 45 A max, 600 V, Through Hole

1

Предлагат се на бройка по 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Semikron SK45GD063, SEMITOP3 , N-Channel Hex IGBT Transistor Module, 45 A max, 600 V, Through Hole
Информацията за складовите наличности временно не е налична.

1

Предлагат се на бройка по 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Semikron

Maximum Continuous Collector Current

45 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

6

Package Type

SEMITOP3

Configuration

Hex

Mounting Type

Through Hole

Channel Type

N

Pin Count

36

Transistor Configuration

Six Pack

Dimensions

55 x 31 x 12mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Страна на произход

Italy

Детайли за продукта

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more