N-Channel MOSFET, 3 A, 125 V, 8-Pin SOIC Semelab D5011UK

Номер на артикул на RS: 738-7773Марка: Semelab№ по каталога на производителя: D5011UK
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

Semelab

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

125 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

7V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+200 °C

Length

4.06mm

Width

5.08mm

Transistor Material

Si

Series

TetraFET

Height

2.18mm

Страна на произход

United Kingdom

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

N-Channel MOSFET, 3 A, 125 V, 8-Pin SOIC Semelab D5011UK

P.O.A.

N-Channel MOSFET, 3 A, 125 V, 8-Pin SOIC Semelab D5011UK
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Semelab

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

125 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

7V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+200 °C

Length

4.06mm

Width

5.08mm

Transistor Material

Si

Series

TetraFET

Height

2.18mm

Страна на произход

United Kingdom

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more