Технически документи
Спецификации
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
65 V
Series
TetraFET
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
7V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.7mm
Height
1.7mm
Страна на произход
United Kingdom
Детайли за продукта
RF MOSFET Transistors, Semelab
MOSFET Transistors, Semelab
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
50
P.O.A.
50
Технически документи
Спецификации
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
65 V
Series
TetraFET
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
7V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.7mm
Height
1.7mm
Страна на произход
United Kingdom
Детайли за продукта