Технически документи
Спецификации
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
65 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
17.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.08mm
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Transistor Material
Si
Length
4.06mm
Height
2.18mm
Series
TetraFET
Страна на произход
United Kingdom
Детайли за продукта
RF MOSFET Transistors, Semelab
MOSFET Transistors, Semelab
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
50
P.O.A.
50
Технически документи
Спецификации
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
65 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
17.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.08mm
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Transistor Material
Si
Length
4.06mm
Height
2.18mm
Series
TetraFET
Страна на произход
United Kingdom
Детайли за продукта