Технически документи
Спецификации
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Package Type
TO-3PFM
Series
SCT2H12NZ
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
5mm
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Forward Diode Voltage
4.3V
Height
21mm
Детайли за продукта
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 67,51
€ 6,751 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
10
€ 67,51
€ 6,751 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
10
Информацията за складовите наличности временно не е налична.
количество | Единична цена | Per Тръба |
---|---|---|
10 - 18 | € 6,751 | € 13,50 |
20 - 98 | € 6,717 | € 13,43 |
100 - 198 | € 6,642 | € 13,28 |
200+ | € 6,521 | € 13,04 |
Технически документи
Спецификации
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Package Type
TO-3PFM
Series
SCT2H12NZ
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
5mm
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Forward Diode Voltage
4.3V
Height
21mm
Детайли за продукта