Технически документи
Спецификации
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Series
SCT2H12NZ
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
21mm
Forward Diode Voltage
4.3V
Детайли за продукта
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 7,976
Each (In a Pack of 2) (ex VAT)
2
€ 7,976
Each (In a Pack of 2) (ex VAT)
2
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
2 - 8 | € 7,976 | € 15,95 |
10 - 18 | € 6,643 | € 13,29 |
20 - 98 | € 6,608 | € 13,22 |
100 - 198 | € 6,532 | € 13,06 |
200+ | € 6,415 | € 12,83 |
Технически документи
Спецификации
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Series
SCT2H12NZ
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
21mm
Forward Diode Voltage
4.3V
Детайли за продукта