ROHM RTR030P02 P-Channel MOSFET, 3 A, 20 V, 3-Pin TSMT RQ5C030TPTL
Технически документи
Спецификации
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
20 V
Series
RTR030P02
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Width
1.6mm
Length
2.9mm
Typical Gate Charge @ Vgs
9.3 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Детайли за продукта
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Запитване за цена
Each (In a Pack of 20) (ex VAT)
20
Запитване за цена
Each (In a Pack of 20) (ex VAT)
Информацията за складовите наличности временно не е налична.
20
Информацията за складовите наличности временно не е налична.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
20 V
Series
RTR030P02
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Width
1.6mm
Length
2.9mm
Typical Gate Charge @ Vgs
9.3 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Детайли за продукта
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products