Технически документи
Спецификации
Brand
ROHMSpectrums Detected
Infrared
Spectrum(s) Detected
Infrared
Typical Fall Time
10µs
Typical Rise Time
10µs
Number of Channels
1
Maximum Light Current
2000µA
Maximum Dark Current
0.5µA
Angle of Half Sensitivity
±36 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
T-1
Dimensions
3.8 (Dia.) x 5.2mm
Collector Current
30mA
Diameter
3.8mm
Minimum Wavelength Detected
800nm
Spectral Range of Sensitivity
800 nm
Series
RPT
Emitter Collector Voltage
5V
Collector Emitter Voltage
32 V
Height
5.2mm
Saturation Voltage
0.4V
Страна на произход
Japan
Детайли за продукта
RPT-34PB3F, Phototransistor
High sensitivity at 800nm
IR Phototransistors, ROHM Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
25
P.O.A.
25
Технически документи
Спецификации
Brand
ROHMSpectrums Detected
Infrared
Spectrum(s) Detected
Infrared
Typical Fall Time
10µs
Typical Rise Time
10µs
Number of Channels
1
Maximum Light Current
2000µA
Maximum Dark Current
0.5µA
Angle of Half Sensitivity
±36 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
T-1
Dimensions
3.8 (Dia.) x 5.2mm
Collector Current
30mA
Diameter
3.8mm
Minimum Wavelength Detected
800nm
Spectral Range of Sensitivity
800 nm
Series
RPT
Emitter Collector Voltage
5V
Collector Emitter Voltage
32 V
Height
5.2mm
Saturation Voltage
0.4V
Страна на произход
Japan
Детайли за продукта
RPT-34PB3F, Phototransistor
High sensitivity at 800nm