ROHM RGT40NS65DGC9, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin I2PAK, Through Hole
Технически документи
Спецификации
Brand
ROHMMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
30V
Maximum Power Dissipation
161 W
Number of Transistors
1
Package Type
TO-262
Mounting Type
Through Hole
Channel Type
P
Pin Count
3+Tab
Transistor Configuration
Single
Dimensions
10.1 x 4.5 x 9mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1070pF
Maximum Operating Temperature
+175 °C
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
5
P.O.A.
5
Ideate. Create. Collaborate
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Технически документи
Спецификации
Brand
ROHMMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
30V
Maximum Power Dissipation
161 W
Number of Transistors
1
Package Type
TO-262
Mounting Type
Through Hole
Channel Type
P
Pin Count
3+Tab
Transistor Configuration
Single
Dimensions
10.1 x 4.5 x 9mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1070pF
Maximum Operating Temperature
+175 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products