ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

Номер на артикул на RS: 144-2259Марка: ROHM№ по каталога на производителя: BSM180D12P3C007
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Технически документи

Спецификации

Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Series

BSM

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

45.6 mm

Length

122mm

Height

17mm

Number of Elements per Chip

2

Страна на произход

Japan

Детайли за продукта

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

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Преглед на всички в MOSFETs

Информацията за складовите наличности временно не е налична.

€ 628,09

€ 628,09 Всеки (ex VAT)

ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

€ 628,09

€ 628,09 Всеки (ex VAT)

ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

Информацията за складовите наличности временно не е налична.

количествоЕдинична цена
1 - 1€ 628,09
2 - 4€ 611,56
5 - 9€ 595,88
10+€ 580,98

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Series

BSM

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

45.6 mm

Length

122mm

Height

17mm

Number of Elements per Chip

2

Страна на произход

Japan

Детайли за продукта

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more