Технически документи
Спецификации
Brand
ROHMProduct Type
SiC Power Module
Channel Type
Type N
Series
BSM
Pin Count
4
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
45.6 mm
Length
122mm
Height
17mm
Number of Elements per Chip
2
Страна на произход
Japan
Детайли за продукта
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Информацията за складовите наличности временно не е налична.
€ 628,09
€ 628,09 Всеки (ex VAT)
1
€ 628,09
€ 628,09 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
1
| количество | Единична цена |
|---|---|
| 1 - 1 | € 628,09 |
| 2 - 4 | € 611,56 |
| 5 - 9 | € 595,88 |
| 10+ | € 580,98 |
Технически документи
Спецификации
Brand
ROHMProduct Type
SiC Power Module
Channel Type
Type N
Series
BSM
Pin Count
4
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
45.6 mm
Length
122mm
Height
17mm
Number of Elements per Chip
2
Страна на произход
Japan
Детайли за продукта
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature


