Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount

Номер на артикул на RS: 121-6899Марка: Renesas Electronics№ по каталога на производителя: RJP4010AGE-01#P5
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Технически документи

Спецификации

Brand

Renesas Electronics

Maximum Continuous Collector Current

150 (Pulse) A

Maximum Collector Emitter Voltage

400 V

Maximum Gate Emitter Voltage

±6V

Maximum Power Dissipation

1.6 W

Package Type

TSOJ

Mounting Type

Surface Mount

Channel Type

N

Pin Count

8

Transistor Configuration

Single

Dimensions

3.1 x 2.5 x 1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+150 °C

Детайли за продукта

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount

4

Предлагат се на бройка по 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

P.O.A.

Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount
Информацията за складовите наличности временно не е налична.

4

Предлагат се на бройка по 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Renesas Electronics

Maximum Continuous Collector Current

150 (Pulse) A

Maximum Collector Emitter Voltage

400 V

Maximum Gate Emitter Voltage

±6V

Maximum Power Dissipation

1.6 W

Package Type

TSOJ

Mounting Type

Surface Mount

Channel Type

N

Pin Count

8

Transistor Configuration

Single

Dimensions

3.1 x 2.5 x 1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+150 °C

Детайли за продукта

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more