Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 (Continuous) A, 15 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-218
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
20
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
0.7mA
Height
20.35mm
Width
4.9mm
Maximum Power Dissipation
80 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
3A
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 1,681
Each (In a Tube of 30) (ex VAT)
30
€ 1,681
Each (In a Tube of 30) (ex VAT)
30
Купете в насипно състояние
количество | Единична цена | Per Тръба |
---|---|---|
30 - 90 | € 1,681 | € 50,43 |
120 - 480 | € 1,378 | € 41,34 |
510 - 990 | € 1,168 | € 35,05 |
1020 - 2490 | € 1,042 | € 31,26 |
2520+ | € 1,041 | € 31,22 |
Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 (Continuous) A, 15 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-218
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
20
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
0.7mA
Height
20.35mm
Width
4.9mm
Maximum Power Dissipation
80 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
3A
Страна на произход
China