N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220AB onsemi RFP50N06

Номер на артикул на RS: 124-1672Марка: onsemi№ по каталога на производителя: RFP50N06
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Series

MegaFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

131 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

125 nC @ 20 V

Width

4.83mm

Number of Elements per Chip

1

Height

9.4mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

MegaFET MOSFET, Fairchild Semiconductor

The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 1,623

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220AB onsemi RFP50N06

€ 1,623

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220AB onsemi RFP50N06
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Тръба
50 - 50€ 1,623€ 81,14
100 - 450€ 1,374€ 68,71
500 - 950€ 1,196€ 59,78
1000+€ 1,16€ 58,02

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Series

MegaFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

131 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

125 nC @ 20 V

Width

4.83mm

Number of Elements per Chip

1

Height

9.4mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

MegaFET MOSFET, Fairchild Semiconductor

The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more