Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
60 V
Series
NVTFS5C658NL
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.15mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Детайли за продукта
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,655
Each (On a Reel of 1500) (ex VAT)
1500
€ 0,655
Each (On a Reel of 1500) (ex VAT)
1500
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
60 V
Series
NVTFS5C658NL
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.15mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Детайли за продукта