N-Channel MOSFET, 370 A, 40 V, 4 + Tab-Pin DFN onsemi NVMFS5C404NLWFAF

Номер на артикул на RS: 141-2979Марка: onsemi№ по каталога на производителя: NVMFS5C404NLWFAFT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

370 A

Maximum Drain Source Voltage

40 V

Series

NVMFS5C404NL

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

181 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Детайли за продукта

N-Channel Power MOSFET, 40V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 7,36

Всеки (ex VAT)

N-Channel MOSFET, 370 A, 40 V, 4 + Tab-Pin DFN onsemi NVMFS5C404NLWFAF
Изберете тип опаковка

€ 7,36

Всеки (ex VAT)

N-Channel MOSFET, 370 A, 40 V, 4 + Tab-Pin DFN onsemi NVMFS5C404NLWFAF
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична цена
1 - 9€ 7,36
10 - 99€ 6,22
100 - 249€ 5,42
250 - 499€ 5,13
500+€ 4,62

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

370 A

Maximum Drain Source Voltage

40 V

Series

NVMFS5C404NL

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

181 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Детайли за продукта

N-Channel Power MOSFET, 40V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more