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onsemi N-Channel MOSFET, 51 A, 30 V, 6-Pin DFN NVMFS4C310NT1G

Номер на артикул на RS: 172-3343Марка: onsemi№ по каталога на производителя: NVMFS4C310NT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

30 V

Series

NVMFS4C310N

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

32 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

5.1mm

Length

6.1mm

Typical Gate Charge @ Vgs

9.7 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.05mm

Automotive Standard

AEC-Q101

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Информацията за складовите наличности временно не е налична.

€ 50,75

€ 1,015 Each (In a Pack of 50) (ex VAT)

onsemi N-Channel MOSFET, 51 A, 30 V, 6-Pin DFN NVMFS4C310NT1G
Изберете тип опаковка

€ 50,75

€ 1,015 Each (In a Pack of 50) (ex VAT)

onsemi N-Channel MOSFET, 51 A, 30 V, 6-Pin DFN NVMFS4C310NT1G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
50 - 450€ 1,015€ 50,74
500 - 950€ 0,874€ 43,70
1000+€ 0,758€ 37,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

30 V

Series

NVMFS4C310N

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

32 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

5.1mm

Length

6.1mm

Typical Gate Charge @ Vgs

9.7 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.05mm

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more