onsemi N-Channel MOSFET, 700 mA, 25 V, 3-Pin SOT-23 NTS4409NT1G

Номер на артикул на RS: 780-4770Марка: onsemi№ по каталога на производителя: NTS4409NT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

700 mA

Maximum Drain Source Voltage

25 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

1.2 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Height

0.9mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 25V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 5,77

€ 0,231 Each (In a Pack of 25) (ex VAT)

onsemi N-Channel MOSFET, 700 mA, 25 V, 3-Pin SOT-23 NTS4409NT1G
Изберете тип опаковка

€ 5,77

€ 0,231 Each (In a Pack of 25) (ex VAT)

onsemi N-Channel MOSFET, 700 mA, 25 V, 3-Pin SOT-23 NTS4409NT1G

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
25 - 75€ 0,231€ 5,77
100 - 225€ 0,199€ 4,97
250 - 475€ 0,173€ 4,32
500 - 975€ 0,151€ 3,78
1000+€ 0,138€ 3,44

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

700 mA

Maximum Drain Source Voltage

25 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

1.2 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Height

0.9mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 25V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more