P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-323 onsemi NTS4173PT1G

Номер на артикул на RS: 780-4761Марка: onsemi№ по каталога на производителя: NTS4173PT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

10.1 nC @ 10 V, 4.8 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.9mm

Детайли за продукта

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,334

Each (Supplied as a Tape) (ex VAT)

P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-323 onsemi NTS4173PT1G
Изберете тип опаковка

€ 0,334

Each (Supplied as a Tape) (ex VAT)

P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-323 onsemi NTS4173PT1G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Лента
25 - 25€ 0,334€ 8,36
50 - 100€ 0,237€ 5,94
125 - 225€ 0,156€ 3,89
250 - 475€ 0,14€ 3,51
500+€ 0,139€ 3,48

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

10.1 nC @ 10 V, 4.8 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.9mm

Детайли за продукта

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more