Технически документи
Спецификации
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 6,71
€ 0,268 Each (Supplied as a Tape) (ex VAT)
Стандарт
25
€ 6,71
€ 0,268 Each (Supplied as a Tape) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
25
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Лента |
|---|---|---|
| 25 - 75 | € 0,268 | € 6,70 |
| 100 - 225 | € 0,231 | € 5,77 |
| 250 - 475 | € 0,20 | € 5,00 |
| 500 - 975 | € 0,176 | € 4,40 |
| 1000+ | € 0,16 | € 4,01 |
Технически документи
Спецификации
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


