Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.9V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.81 nC @ 5 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,034
Each (On a Reel of 3000) (ex VAT)
3000
€ 0,034
Each (On a Reel of 3000) (ex VAT)
3000
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
3000 - 6000 | € 0,034 | € 101,75 |
9000 - 21000 | € 0,028 | € 84,20 |
24000 - 42000 | € 0,025 | € 73,68 |
45000 - 96000 | € 0,022 | € 66,66 |
99000+ | € 0,021 | € 63,15 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.9V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.81 nC @ 5 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Страна на произход
China