N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 onsemi NTR4003NG

Номер на артикул на RS: 780-4742Марка: onsemi№ по каталога на производителя: NTR4003NT3G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

560 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.01mm

Детайли за продукта

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,239

Each (In a Pack of 50) (ex VAT)

N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 onsemi NTR4003NG
Изберете тип опаковка

€ 0,239

Each (In a Pack of 50) (ex VAT)

N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 onsemi NTR4003NG
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
50 - 450€ 0,239€ 11,97
500 - 1200€ 0,221€ 11,03
1250 - 2450€ 0,208€ 10,39
2500 - 4950€ 0,191€ 9,57
5000+€ 0,176€ 8,82

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

560 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.01mm

Детайли за продукта

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more