N-Channel MOSFET, 3.6 A, 20 V, 3-Pin SOT-23 onsemi NTR3C21NZT1G

Номер на артикул на RS: 184-1066Марка: onsemi№ по каталога на производителя: NTR3C21NZT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

470 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

17.8 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 0,116

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 3.6 A, 20 V, 3-Pin SOT-23 onsemi NTR3C21NZT1G

€ 0,116

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 3.6 A, 20 V, 3-Pin SOT-23 onsemi NTR3C21NZT1G
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

470 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

17.8 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more