P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02G

Номер на артикул на RS: 688-9143Марка: onsemi№ по каталога на производителя: NTR1P02T1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

2.5 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

0.94mm

Детайли за продукта

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,327

Each (In a Pack of 2) (ex VAT)

P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02G
Изберете тип опаковка

€ 0,327

Each (In a Pack of 2) (ex VAT)

P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
2 - 98€ 0,327€ 0,65
100 - 198€ 0,315€ 0,63
200 - 498€ 0,257€ 0,51
500 - 998€ 0,245€ 0,49
1000+€ 0,228€ 0,46

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

2.5 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

0.94mm

Детайли за продукта

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more