Технически документи
Спецификации
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.1 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.01mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,118
Each (Supplied as a Tape) (ex VAT)
200
€ 0,118
Each (Supplied as a Tape) (ex VAT)
200
Купете в насипно състояние
количество | Единична цена | Per Лента |
---|---|---|
200 - 200 | € 0,118 | € 23,58 |
400 - 800 | € 0,109 | € 21,72 |
1000 - 1800 | € 0,102 | € 20,31 |
2000+ | € 0,093 | € 18,68 |
Технически документи
Спецификации
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.1 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.01mm
Minimum Operating Temperature
-55 °C
Детайли за продукта