P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02LT3G

Номер на артикул на RS: 808-0060Марка: onsemi№ по каталога на производителя: NTR1P02LT3G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.25V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

3.1 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.01mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,118

Each (Supplied as a Tape) (ex VAT)

P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02LT3G
Изберете тип опаковка

€ 0,118

Each (Supplied as a Tape) (ex VAT)

P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02LT3G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Лента
200 - 200€ 0,118€ 23,58
400 - 800€ 0,109€ 21,72
1000 - 1800€ 0,102€ 20,31
2000+€ 0,093€ 18,68

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.25V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

3.1 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.01mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more