onsemi P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 NTR1P02LT3G

Номер на артикул на RS: 808-0060PМарка: onsemi№ по каталога на производителя: NTR1P02LT3G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.25V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Typical Gate Charge @ Vgs

3.1 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.04mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Детайли за продукта

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 31,82

€ 0,08 Each (Supplied on a Reel) (ex VAT)

onsemi P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 NTR1P02LT3G
Изберете тип опаковка

€ 31,82

€ 0,08 Each (Supplied on a Reel) (ex VAT)

onsemi P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 NTR1P02LT3G

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Ролка
400 - 800€ 0,08€ 15,91
1000 - 1800€ 0,075€ 15,00
2000+€ 0,069€ 13,86

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.25V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Typical Gate Charge @ Vgs

3.1 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.04mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Детайли за продукта

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more