Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 5,216
Each (In a Tube of 50) (ex VAT)
50
€ 5,216
Each (In a Tube of 50) (ex VAT)
50
Купете в насипно състояние
количество | Единична цена | Per Тръба |
---|---|---|
50 - 50 | € 5,216 | € 260,80 |
100+ | € 4,955 | € 247,76 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Страна на произход
China