N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 onsemi NTPF082N65S3F

Номер на артикул на RS: 178-4258Марка: onsemi№ по каталога на производителя: NTPF082N65S3F
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.9mm

Maximum Operating Temperature

+150 °C

Length

10.63mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Number of Elements per Chip

1

Height

16.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 5,216

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 onsemi NTPF082N65S3F

€ 5,216

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 onsemi NTPF082N65S3F
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Тръба
50 - 50€ 5,216€ 260,80
100+€ 4,955€ 247,76

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.9mm

Maximum Operating Temperature

+150 °C

Length

10.63mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Number of Elements per Chip

1

Height

16.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more