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onsemi N-Channel MOSFET, 71 A, 40 V, 4-Pin LFPAK, SOT-669 NTMYS5D3N04CTWG

Номер на артикул на RS: 195-2521Марка: onsemi№ по каталога на производителя: NTMYS5D3N04CTWG
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.25mm

Length

5mm

Typical Gate Charge @ Vgs

16 @ 10 V nC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

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Информацията за складовите наличности временно не е налична.

€ 30,80

€ 1,232 Each (In a Pack of 25) (ex VAT)

onsemi N-Channel MOSFET, 71 A, 40 V, 4-Pin LFPAK, SOT-669 NTMYS5D3N04CTWG
Изберете тип опаковка

€ 30,80

€ 1,232 Each (In a Pack of 25) (ex VAT)

onsemi N-Channel MOSFET, 71 A, 40 V, 4-Pin LFPAK, SOT-669 NTMYS5D3N04CTWG
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
25 - 75€ 1,232€ 30,80
100 - 225€ 1,062€ 26,55
250+€ 0,921€ 23,03

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.25mm

Length

5mm

Typical Gate Charge @ Vgs

16 @ 10 V nC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more