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onsemi N-Channel MOSFET, 36 A, 60 V, 4-Pin LFPAK, SOT-669 NTMYS014N06CLTWG

Номер на артикул на RS: 195-2528Марка: onsemi№ по каталога на производителя: NTMYS014N06CLTWG
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

21.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.25mm

Length

5mm

Typical Gate Charge @ Vgs

9.7 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

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Информацията за складовите наличности временно не е налична.

€ 2 320,76

€ 0,774 Each (On a Reel of 3000) (ex VAT)

onsemi N-Channel MOSFET, 36 A, 60 V, 4-Pin LFPAK, SOT-669 NTMYS014N06CLTWG

€ 2 320,76

€ 0,774 Each (On a Reel of 3000) (ex VAT)

onsemi N-Channel MOSFET, 36 A, 60 V, 4-Pin LFPAK, SOT-669 NTMYS014N06CLTWG
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

21.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.25mm

Length

5mm

Typical Gate Charge @ Vgs

9.7 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more