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onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG

Номер на артикул на RS: 189-0485Марка: onsemi№ по каталога на производителя: NTMJS0D9N04CLTWG
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

330 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.9mm

Length

5mm

Typical Gate Charge @ Vgs

143 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

1.2mm

Minimum Operating Temperature

-55 °C

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Информацията за складовите наличности временно не е налична.

€ 11,73

€ 2,347 Each (In a Pack of 5) (ex VAT)

onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG
Изберете тип опаковка

€ 11,73

€ 2,347 Each (In a Pack of 5) (ex VAT)

onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
5 - 45€ 2,347€ 11,73
50 - 95€ 2,023€ 10,11
100+€ 1,753€ 8,76

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

330 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.9mm

Length

5mm

Typical Gate Charge @ Vgs

143 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

1.2mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more