N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G

Номер на артикул на RS: 172-8986Марка: onsemi№ по каталога на производителя: NTMFS6H801NT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

166 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Width

5.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.1mm

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Информацията за складовите наличности временно не е налична.

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€ 2,183

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G
Изберете тип опаковка

€ 2,183

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 5€ 2,183€ 10,92
10 - 95€ 1,838€ 9,19
100 - 245€ 1,452€ 7,26
250 - 495€ 1,396€ 6,98
500+€ 1,219€ 6,09

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

166 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Width

5.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.1mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more