onsemi N-Channel MOSFET, 89 A, 60 V, 8-Pin SO-8FL NTMFS5C646NLT1G

Номер на артикул на RS: 842-7933PМарка: onsemi№ по каталога на производителя: NTMFS5C646NLT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

60 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

33.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 92,71

€ 1,854 Each (Supplied on a Reel) (ex VAT)

onsemi N-Channel MOSFET, 89 A, 60 V, 8-Pin SO-8FL NTMFS5C646NLT1G
Изберете тип опаковка

€ 92,71

€ 1,854 Each (Supplied on a Reel) (ex VAT)

onsemi N-Channel MOSFET, 89 A, 60 V, 8-Pin SO-8FL NTMFS5C646NLT1G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Ролка
50 - 95€ 1,854€ 9,27
100 - 495€ 1,607€ 8,03
500 - 995€ 1,413€ 7,06
1000+€ 1,285€ 6,43

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

60 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

33.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more