onsemi N-Channel MOSFET, 276 A, 60 V, 8-Pin SO-8FL NTMFS5C604NLT1G

Номер на артикул на RS: 163-0285Марка: onsemi№ по каталога на производителя: NTMFS5C604NLT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

276 A

Maximum Drain Source Voltage

60 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

120 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.1mm

Length

6.1mm

Minimum Operating Temperature

-55 °C

Height

1.05mm

Страна на произход

Malaysia

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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onsemi N-Channel MOSFET, 276 A, 60 V, 8-Pin SO-8FL NTMFS5C604NLT1G

€ 1 404,41

€ 0,936 Each (On a Reel of 1500) (ex VAT)

onsemi N-Channel MOSFET, 276 A, 60 V, 8-Pin SO-8FL NTMFS5C604NLT1G

Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Nexperia N-Channel MOSFET, 200 A, 55 V, 4-Pin LFPAK56E PSMN2R0-55YLHX
€ 1,595Each (On a Reel of 1500) (ex VAT)

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

276 A

Maximum Drain Source Voltage

60 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

120 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.1mm

Length

6.1mm

Minimum Operating Temperature

-55 °C

Height

1.05mm

Страна на произход

Malaysia

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Nexperia N-Channel MOSFET, 200 A, 55 V, 4-Pin LFPAK56E PSMN2R0-55YLHX
€ 1,595Each (On a Reel of 1500) (ex VAT)