Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Package Type
SO-8FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
11.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
41.7 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.1mm
Typical Gate Charge @ Vgs
11.3 nC @ 4.5 V, 24.4 nC @ 11.5 V
Width
6.1mm
Number of Elements per Chip
1
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
1500
P.O.A.
1500
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Package Type
SO-8FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
11.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
41.7 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.1mm
Typical Gate Charge @ Vgs
11.3 nC @ 4.5 V, 24.4 nC @ 11.5 V
Width
6.1mm
Number of Elements per Chip
1
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта