onsemi Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC NTMD4N03R2G

Номер на артикул на RS: 780-0674Марка: onsemi№ по каталога на производителя: NTMD4N03R2G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

8 nC @ 10 V dc

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

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Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 4,69

€ 0,469 Each (In a Pack of 10) (ex VAT)

onsemi Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC NTMD4N03R2G
Изберете тип опаковка

€ 4,69

€ 0,469 Each (In a Pack of 10) (ex VAT)

onsemi Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC NTMD4N03R2G

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
10 - 90€ 0,469€ 4,69
100 - 240€ 0,405€ 4,05
250 - 490€ 0,351€ 3,51
500 - 990€ 0,308€ 3,08
1000+€ 0,281€ 2,81

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

8 nC @ 10 V dc

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more