Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Length
2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
2mm
Minimum Operating Temperature
-55 °C
Height
0.75mm
Детайли за продукта
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 4,42
€ 0,442 Each (Supplied as a Tape) (ex VAT)
Стандарт
10
€ 4,42
€ 0,442 Each (Supplied as a Tape) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
10
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Лента |
|---|---|---|
| 10 - 90 | € 0,442 | € 4,42 |
| 100 - 240 | € 0,382 | € 3,82 |
| 250 - 490 | € 0,331 | € 3,31 |
| 500 - 990 | € 0,291 | € 2,91 |
| 1000+ | € 0,265 | € 2,65 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Length
2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
2mm
Minimum Operating Temperature
-55 °C
Height
0.75mm
Детайли за продукта


