onsemi Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN NTLJD4116NT1G

Номер на артикул на RS: 790-5268Марка: onsemi№ по каталога на производителя: NTLJD4116NT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

2

Width

2mm

Minimum Operating Temperature

-55 °C

Height

0.75mm

Детайли за продукта

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 4,42

€ 0,442 Each (Supplied as a Tape) (ex VAT)

onsemi Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN NTLJD4116NT1G
Изберете тип опаковка

€ 4,42

€ 0,442 Each (Supplied as a Tape) (ex VAT)

onsemi Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN NTLJD4116NT1G

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Лента
10 - 90€ 0,442€ 4,42
100 - 240€ 0,382€ 3,82
250 - 490€ 0,331€ 3,31
500 - 990€ 0,291€ 2,91
1000+€ 0,265€ 2,65

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

2

Width

2mm

Minimum Operating Temperature

-55 °C

Height

0.75mm

Детайли за продукта

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more