Технически документи
Спецификации
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
4.1 A, 4.6 A
Maximum Drain Source Voltage
20 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
120 mΩ, 200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Width
2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.75mm
Детайли за продукта
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
MOSFET Transistors, ON Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,665
Each (In a Pack of 10) (ex VAT)
10
€ 0,665
Each (In a Pack of 10) (ex VAT)
10
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
10 - 90 | € 0,665 | € 6,66 |
100 - 490 | € 0,467 | € 4,67 |
500 - 990 | € 0,405 | € 4,05 |
1000 - 2990 | € 0,344 | € 3,44 |
3000+ | € 0,323 | € 3,23 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
4.1 A, 4.6 A
Maximum Drain Source Voltage
20 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
120 mΩ, 200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Width
2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.75mm
Детайли за продукта
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.