Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PG

Номер на артикул на RS: 780-0611Марка: onsemi№ по каталога на производителя: NTJD4152PT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

880 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

350 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Детайли за продукта

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,372

Each (In a Pack of 25) (ex VAT)

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PG
Изберете тип опаковка

€ 0,372

Each (In a Pack of 25) (ex VAT)

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PG
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
25 - 50€ 0,372€ 9,30
75 - 125€ 0,255€ 6,37
150 - 275€ 0,16€ 4,01
300 - 575€ 0,152€ 3,80
600+€ 0,147€ 3,68

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

880 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

350 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Детайли за продукта

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more