Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Length
2.2mm
Width
1.35mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 91,37
€ 0,152 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
600
€ 91,37
€ 0,152 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
600
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 600 - 1450 | € 0,152 | € 7,62 |
| 1500+ | € 0,117 | € 5,85 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Length
2.2mm
Width
1.35mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


