N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 onsemi NTHL065N65S3F

Номер на артикул на RS: 178-4255Марка: onsemi№ по каталога на производителя: NTHL065N65S3F
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

337 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

98 nC @ 10 V

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 8,651

Each (In a Tube of 30) (ex VAT)

N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 onsemi NTHL065N65S3F

€ 8,651

Each (In a Tube of 30) (ex VAT)

N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 onsemi NTHL065N65S3F
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Тръба
30 - 90€ 8,651€ 259,54
120 - 240€ 8,424€ 252,70
270 - 480€ 8,208€ 246,23
510+€ 8,002€ 240,06

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

337 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

98 nC @ 10 V

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more