Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Width
4.82mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 13,088
Each (In a Tube of 30) (ex VAT)
30
€ 13,088
Each (In a Tube of 30) (ex VAT)
30
Купете в насипно състояние
количество | Единична цена | Per Тръба |
---|---|---|
30 - 90 | € 13,088 | € 392,63 |
120 - 240 | € 12,743 | € 382,30 |
270 - 480 | € 12,416 | € 372,49 |
510+ | € 12,106 | € 363,17 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Width
4.82mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Страна на произход
China