Dual N/P-Channel-Channel MOSFET, 3 A, 3.9 A, 20 V, 8-Pin ChipFET ON Semiconductor NTHC5513T1G
Технически документи
Спецификации
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
3 A, 3.9 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
115 mΩ, 240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V, 3 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Детайли за продукта
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
25
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
25
Информацията за складовите наличности временно не е налична.
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
3 A, 3.9 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
115 mΩ, 240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V, 3 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Детайли за продукта
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products