onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055L108T1G

Номер на артикул на RS: 463-307Марка: onsemi№ по каталога на производителя: NTF3055L108T1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

7.6 nC @ 5 V

Width

3.5mm

Height

1.57mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 11,02

€ 0,551 Each (In a Pack of 20) (ex VAT)

onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055L108T1G
Изберете тип опаковка

€ 11,02

€ 0,551 Each (In a Pack of 20) (ex VAT)

onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055L108T1G

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
20 - 180€ 0,551€ 11,02
200 - 480€ 0,475€ 9,50
500+€ 0,413€ 8,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

7.6 nC @ 5 V

Width

3.5mm

Height

1.57mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more