P-Channel MOSFET, 760 mA, 20 V, 3-Pin SOT-523 onsemi NTE4151PT1G

Номер на артикул на RS: 124-5403Марка: onsemi№ по каталога на производителя: NTE4151PT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Width

0.95mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

2.1 nC @ 5 V

Height

0.8mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,086

Each (On a Reel of 3000) (ex VAT)

P-Channel MOSFET, 760 mA, 20 V, 3-Pin SOT-523 onsemi NTE4151PT1G

€ 0,086

Each (On a Reel of 3000) (ex VAT)

P-Channel MOSFET, 760 mA, 20 V, 3-Pin SOT-523 onsemi NTE4151PT1G
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Width

0.95mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

2.1 nC @ 5 V

Height

0.8mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more