N-Channel MOSFET, 95 A, 30 V, 3-Pin DPAK onsemi NTD4805NG

Номер на артикул на RS: 805-1980PМарка: onsemi№ по каталога на производителя: NTD4805NT4G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

95 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Transistor Material

Si

Typical Gate Charge @ Vgs

20.5 nC @ 4.5 V

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.38mm

Детайли за продукта

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Запитване за цена

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 95 A, 30 V, 3-Pin DPAK onsemi NTD4805NG
Изберете тип опаковка

Запитване за цена

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 95 A, 30 V, 3-Pin DPAK onsemi NTD4805NG

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

95 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Transistor Material

Si

Typical Gate Charge @ Vgs

20.5 nC @ 4.5 V

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.38mm

Детайли за продукта

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more