Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
95 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20.5 nC @ 4.5 V
Width
6.22mm
Minimum Operating Temperature
-55 °C
Height
2.38mm
Детайли за продукта
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
20
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
20
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
95 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20.5 nC @ 4.5 V
Width
6.22mm
Minimum Operating Temperature
-55 °C
Height
2.38mm
Детайли за продукта


