Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
117 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
5
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
5
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
117 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


