N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK onsemi NTD24N06LT4G

Номер на артикул на RS: 688-9127Марка: onsemi№ по каталога на производителя: NTD24N06LT4G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Typical Gate Charge @ Vgs

16 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 1,392

Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK onsemi NTD24N06LT4G
Изберете тип опаковка

€ 1,392

Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK onsemi NTD24N06LT4G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
2 - 18€ 1,392€ 2,78
20 - 38€ 1,322€ 2,64
40 - 98€ 1,228€ 2,46
100 - 198€ 1,193€ 2,39
200+€ 1,146€ 2,29

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Typical Gate Charge @ Vgs

16 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more