onsemi N-Channel MOSFET, 20 A, 60 V, 3-Pin D2PAK NTD20N06T4G
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
21.2 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
9.65mm
Number of Elements per Chip
1
Length
10.29mm
Minimum Operating Temperature
-55 °C
Height
4.83mm
Детайли за продукта
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 187,07
€ 0,935 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
200
€ 187,07
€ 0,935 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
200
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 200 - 480 | € 0,935 | € 18,71 |
| 500+ | € 0,811 | € 16,23 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
21.2 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
9.65mm
Number of Elements per Chip
1
Length
10.29mm
Minimum Operating Temperature
-55 °C
Height
4.83mm
Детайли за продукта
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products