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onsemi P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP

Номер на артикул на RS: 178-7591Марка: onsemi№ по каталога на производителя: NDS352AP
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

30 V

Series

NDS352AP

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

2.92mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.94mm

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Информацията за складовите наличности временно не е налична.

€ 387,19

€ 0,129 Each (On a Reel of 3000) (ex VAT)

onsemi P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP

€ 387,19

€ 0,129 Each (On a Reel of 3000) (ex VAT)

onsemi P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

30 V

Series

NDS352AP

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

2.92mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.94mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more