Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Height
0.94mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 14,55
€ 0,291 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
€ 14,55
€ 0,291 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
50 - 95 | € 0,291 | € 1,46 |
100 - 495 | € 0,253 | € 1,27 |
500 - 995 | € 0,223 | € 1,12 |
1000+ | € 0,202 | € 1,01 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Height
0.94mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.