Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Height
0.94mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 7,22
€ 0,144 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
€ 7,22
€ 0,144 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
50
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 50 - 95 | € 0,144 | € 0,72 |
| 100 - 495 | € 0,126 | € 0,63 |
| 500 - 995 | € 0,11 | € 0,55 |
| 1000+ | € 0,101 | € 0,50 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Height
0.94mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


