Технически документи
Спецификации
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-2 to -15mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 1.04mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Width
1.3mm
Детайли за продукта
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 144,34
€ 0,289 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
500
€ 144,34
€ 0,289 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
500
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 500 - 950 | € 0,289 | € 14,43 |
| 1000+ | € 0,25 | € 12,50 |
Технически документи
Спецификации
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-2 to -15mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 1.04mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Width
1.3mm
Детайли за продукта
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


